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| FDZ208P January 2003 FDZ208P General Description Combining Fairchild's advanced 30 Volt P-Channel Trench II Process with 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). P-Channel 30 Volt PowerTrench BGA MOSFET Features * -12.5 A, -30 V. RDS(ON) = 10.5 m @ VGS = -10 V RDS(ON) = 16.5 m @ VGS = -4.5 V * Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * 3.5 x 4 mm2 footprint * High power and current handling capability Applications * Battery management * Load switch * Battery protection D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 S F208P G Pin 1 D D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID PD TJ, Tstg Symbol Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) Parameter (Note 1a) (Note 1a) (Note 1a) Operating and Storage Junction Temperature Range -30 25 -12.5 -60 2.2 1.0 -55 to +150 Ratings Units V V A W C Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 C/W C/W C/W Package Marking and Ordering Information Device Marking 208P Device FDZ208P Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2003 Fairchild Semiconductor Corporation FDZ208P Rev. C1 (W) FDZ208P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25 unless otherwise noted C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = -25 V, VGS = 25 V, VGS = 0 V VDS = 0 V VDS = 0 V Min -30 Typ Max Units V mV/C -1 -100 100 A nA nA Off Characteristics -20 On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -12.5 A VGS = -4.5 V, ID = -9.5 A VGS = -10 V,ID = -12.5A,TJ=125C VGS = -10 V, VDS = -5 V VDS = -10 V, ID = -12.5 A VDS = -15 V, f = 1.0 MHz V GS = 0 V, -1 -1.5 5 9 13 11.7 -3 V mV/C m A S pF pF pF 10.5 16.5 15 -30 40 2409 614 300 13 11 74 42 25 5 10 24 21 119 68 35 Dynamic Characteristics Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 VDS = -15 V, VGS = -5 V ID = -12.5 A, ns ns ns ns nC nC nC A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current VGS = 0 V, VSD trr Qrr Notes: 1. -1.8 -0.7 29.5 30.2 -1.2 Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge IS = -1.8 A (Note 2) IF = 12.5 A, diF/dt = 100 A/s junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the a) 56 C/W when 2 mounted on a 1in pad of 2 oz copper b) 119 C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ208P Rev. C1 (W) FDZ208P Dimensional Outline and Pad Layout FDZ208P Rev. C1 (W) FDZ208P Typical Characteristics 60 VGS =-10V -6.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 -3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 -ID, DRAIN CURRENT (A) 45 -ID, DRAIN CURRENT (A) 45 VGS = -3.5V 30 -3.0V -4.0V -4.5V -5.0V -6.0V -8.0V -10V 15 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN-SOURCE VOLTAGE (V) 60 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -12.5A VGS = -10V ID = -6.2 A 0.035 0.03 0.025 1.2 TA = 125oC 0.02 0.015 0.01 0.005 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 60 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V VDS = -5V -ID, DRAIN CURRENT (A) 45 TA = -55oC 25oC 125oC 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC 30 15 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ208P Rev. C1 (W) FDZ208P Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) 3500 ID = -12.5A VDS = -10V -15V 8 3000 CAPACITANCE (pF) 2500 2000 1500 1000 500 COSS CISS f = 1MHz VGS = 0 V 6 -20V 4 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) CRSS 0 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 30 SINGLE PULSE RJA = 119 C/W TA = 25 C 1 VGS = -10V SINGLE PULSE RJA = 119oC/W TA = 25oC 0.01 0.01 1s 10s DC 20 0.1 10 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA(t) = r(t) * RJA RJA = 119 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.01 0.01 0.001 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ208P Rev. C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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